III-nitride dry etching: Comparison of inductively coupled plasma chemistries
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چکیده
منابع مشابه
Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma
The inductively coupled plasma etching characteristics of Co2MnSi thin films patterned using a TiN hard mask were investigated by the addition of CH3OH to Ar gas. As the CH3OH concentration increased, the etch rates of Co2MnSi magnetic thin films and TiN hard mask decreased, but the etch profile improved. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profil...
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In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifically, utilizing an advanced dry etching tool to define InP Gunn diode mesas. Unlike FeCl3-based photochemical etches, the Inductively Coupled Plasma (ICP) offers excellent sidewall anisotropy and uniformity, which provides improved process consistency to facilitate mass manufacturablity of millime...
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Titanium is a promising new material system for the bulk micromachining of microelectromechanical MEMS devices. Titaniumbased MEMS have the potential to be used for a number of applications, including those which require high fracture toughness or biocompatibility. The bulk titanium etch rate, TiO2 mask etch rate, and surface roughness in an inductively coupled plasma ICP as a function of vario...
متن کاملDry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching
Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are obtained which exhibit a root mean squared (rms) roughness of only 40—60 A _ . The inclination angle of the etched mirrors is within $2° of vertical, as SEM studies indicate. Photopumping measurements ...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 1999
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.582037